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A5G08H800W19NR3 NXP Semiconductors
*For representation only.

A5G08H800W19NR3

GaN FETs Airfast RF Power GaN Transistor, 865-960 MHz, 112 W Avg., 50 V
Technical Specifications
Technology GaN
Configuration -
Frequency 865MHz ~ 960MHz
Gain 18.2dB
Voltage - Test 50 V
Current Rating (Amps) -
Noise Figure -
Current - Test 350 mA
Power - Output 112W
Voltage - Rated 125 V
Grade -
Qualification -
Mounting Type Surface Mount
Package / Case OM-780-4S4S
Supplier Device Package OM-780-4S4S
📦 Product Attributes
Packaging Reel
Standard Pack Qty 250
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,303
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 365 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

A5G08H800W19NR3 is a gan fets manufactured by NXP Semiconductors. Key specifications include a technology of GaN, a configuration of -, a frequency of 865MHz ~ 960MHz, a gain of 18.2dB, a voltage, test of 50 V and a current rating of -. This part has a typical lead time of 365 Days from factory and ships with a full manufacturer datasheet available for download. Order A5G08H800W19NR3 from Simplytronix for authenticated stock and same-day order processing.

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