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GANE240-700BBAZ

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GaN FETs GANE240-700BBA/SOT428/DPAK
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 240mOhm @ 3A, 6V
Vgs(th) (Max) @ Id 2.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs 2 nC @ 6 V
Vgs (Max) +7V, -1.4V
Input Capacitance (Ciss) (Max) @ Vds 79 pF @ 400 V
FET Feature -
Power Dissipation (Max) 74W (Tc)
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Product Attributes
Packaging Reel
Standard Pack Qty2500
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,070
In Stock
Packaging: Reel
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryGaN FETs
RoHSRoHS Compliant
LifecycleNew Product
Reported Lead Time 112 Days (from factory)
Documentation
Not Available
Compliance & Export Information
Country Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

GANE240-700BBAZ by Nexperia is a gan fets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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