*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 2.2A, 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 6.6mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 6 V |
| Vgs (Max) | +7V, -1.4V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 400 V |
| Power Dissipation (Max) | 65W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | DFN5060-5 |
| Package / Case | 8-PowerVDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
4,324
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Nexperia, the GANE350-650FBAZ is classified as a gan fets. This component is defined by a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 6A (Tc), a drive voltage of 6V and a rds on (max) @ id, vgs of 350mOhm @ 2.2A, 6V. This part has a typical lead time of 112 Days from factory. Order GANE350-650FBAZ from Simplytronix for authenticated stock and same-day order processing.
