*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 10A, 5V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 15.8 nC @ 5 V |
| Vgs (Max) | 40V |
| Input Capacitance (Ciss) (Max) @ Vds | 887 pF @ 20 V |
| FET Feature | - |
| Power Dissipation (Max) | 13W (Ta) |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 22-WLCSP (2.1x2.1) |
| Package / Case | 22-UFBGA, WLCSP |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2500 |
6,098
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 28 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Nexperia, the GANB4R8-040CBAZ is classified as a gan fets. Key specifications include a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 20A (Ta), a drive voltage of 5V and a rds on (max) @ id, vgs of 4.8mOhm @ 10A, 5V. This part has a typical lead time of 28 Days from factory. You can source GANB4R8-040CBAZ through Simplytronix, with fast shipping and verified authenticity.
