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IRLB8314PBF Infineon Technologies
*For representation only.

IRLB8314PBF

MOSFETs IR FET UP TO 60V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 68A, 10V
Vgs(th) (Max) @ Id 2.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 15 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,043
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

IRLB8314PBF is a mosfets manufactured by Infineon Technologies. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V and a current, continuous drain (id) @ 25°C of 171A (Tc). This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IRLB8314PBF for same-day shipping with genuine parts guaranteed.

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