*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 750 V |
| Current - Continuous Drain (Id) @ 25°C | 163A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 20V |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 90.3A, 20V |
| Vgs(th) (Max) @ Id | 5.6V @ 32.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 6137 pF @ 500 V |
| Power Dissipation (Max) | 517W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-4-U02 |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 240 |
3,940
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
AIMZA75R008M1HXKSA1 is a mosfets manufactured by Infineon Technologies. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 750 V and a current, continuous drain (id) @ 25°C of 163A (Tc). This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks AIMZA75R008M1HXKSA1 for same-day shipping with genuine parts guaranteed.
