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2N7002DWH6327XTSA1 Infineon Technologies
*For representation only.

2N7002DWH6327XTSA1

MOSFETs N-Ch 60V 300mA SOT-363-6
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 300mA
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Power - Max 500mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging 2N7002DW H6327
Suggested Replacement
10,757
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 273 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210095
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

2N7002DWH6327XTSA1 by Infineon Technologies is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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