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SPA06N80C3XKSA1 Infineon Technologies
*For representation only.

SPA06N80C3XKSA1

MOSFETs N-Ch 800V 6A TO220FP-3 CoolMOS C3
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 785 pF @ 100 V
FET Feature -
Power Dissipation (Max) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-31
Package / Case TO-220-3 Full Pack
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging SPA06N80C3
Suggested Replacement
5,858
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle Not Recommended for New Designs
Lead Time 15 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The SPA06N80C3XKSA1 from Infineon Technologies falls under the mosfets category. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 800 V, a current, continuous drain (id) @ 25°C of 6A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 900mOhm @ 3.8A, 10V. This part has a typical lead time of 15 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SPA06N80C3XKSA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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