*For representation only.
ISZ033N03LF2SATMA1
MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 109A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 30µA |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1415 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 71W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TSDSON-8 FL |
| Package / Case | 8-PowerTDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
9,661
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 364 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the ISZ033N03LF2SATMA1 is classified as a mosfets. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 20A (Ta), 109A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 3.3mOhm @ 20A, 10V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries ISZ033N03LF2SATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.
