*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 15.4A (Ta), 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 15V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 75 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 |
| Package / Case | 8-PowerTDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
5,149
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 20 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Infineon Technologies's ISC055N15NM6ATMA1 is a widely used mosfets in electronic designs. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 150 V, a current, continuous drain (id) @ 25°C of 15.4A (Ta), 130A (Tc), a drive voltage of 8V, 15V and a rds on (max) @ id, vgs of 5.2mOhm @ 50A, 15V. This part has a typical lead time of 20 Days from factory and ships with a full manufacturer datasheet available for download. Order ISC055N15NM6ATMA1 from Simplytronix for authenticated stock and same-day order processing.
