*For representation only.
⚙
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 179A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 109µA |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 208W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TDSON-8 FL |
| Package / Case | 8-PowerTDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
9,904
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 52 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
Manufactured by Infineon Technologies, the ISC030N10NM6ATMA1 is classified as a mosfets. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 21A (Ta), 179A (Tc), a drive voltage of 8V, 10V and a rds on (max) @ id, vgs of 3mOhm @ 50A, 10V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. You can source ISC030N10NM6ATMA1 through Simplytronix, with fast shipping and verified authenticity.
