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ISC016N08NM8ATMA1

MOSFETs OptiMOS 8 Power MOSFET, 80 V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 268A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 15V
Rds On (Max) @ Id, Vgs 1.54mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 3.5V @ 111µA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 40 V
Power Dissipation (Max) 3W (Ta), 263W (Tc)
Operating Temperature -55°C ~ 175°C
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
Product Attributes
Packaging Reel
Standard Pack Qty5000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,508
In Stock
Packaging: Reel
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHS
LifecycleNew Product
Reported Lead Time 365 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CAHTS 8541290000
USHTS 8541290055
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
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