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ISC016N04NM7VATMA1 Infineon Technologies
*For representation only.

ISC016N04NM7VATMA1

MOSFETs OptiMOS 7 Power-Transistor, 40 V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 15V
Rds On (Max) @ Id, Vgs 1.49mOhm @ 50A, 15V
Vgs(th) (Max) @ Id 3.15V @ 35µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
Package / Case 8-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,594
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 52 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The ISC016N04NM7VATMA1 from Infineon Technologies falls under the mosfets category. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 31A (Ta), 174A (Tc), a drive voltage of 10V, 15V and a rds on (max) @ id, vgs of 1.49mOhm @ 50A, 15V. This part has a typical lead time of 52 Days from factory and ships with a full manufacturer datasheet available for download. Order ISC016N04NM7VATMA1 from Simplytronix for authenticated stock and same-day order processing.

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