*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V |
| Vgs(th) (Max) @ Id | 2.7V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 13.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V |
| Power - Max | 1.4W (Ta), 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | PG-DSO-8-920 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 4000 |
8,167
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 18 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's ISA220280C03LMDSXTMA1 is a widely used mosfets in electronic designs. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of N and P-Channel, a FET feature of -, a drain to source voltage of 30V, a current, continuous drain (id) @ 25°C of 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) and a rds on (max) @ id, vgs of 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V. This part has a typical lead time of 18 Days from factory and ships with a full manufacturer datasheet available for download. Order ISA220280C03LMDSXTMA1 from Simplytronix for authenticated stock and same-day order processing.
