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IRL100HS121 Infineon Technologies
*For representation only.

IRL100HS121

MOSFETs DIFFERENTIATED MOSFETS
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 6.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 5.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 440 pF @ 50 V
FET Feature -
Power Dissipation (Max) 11.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 6-PQFN (2x2) (DFN2020)
Package / Case 6-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 4000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,167
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 56 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8542390000
USHTS 8541290065
TARIC 8541290000
MXHTS 8542399901
ECCN EAR99
Product Overview

IRL100HS121 is a mosfets manufactured by Infineon Technologies. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 11A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 42mOhm @ 6.7A, 10V. This part has a typical lead time of 56 Days from factory and ships with a full manufacturer datasheet available for download. Order IRL100HS121 from Simplytronix for authenticated stock and same-day order processing.

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