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IRFR5410TRPBF Infineon Technologies
*For representation only.

IRFR5410TRPBF

MOSFETs 1 P-CH -100V HEXFET 205mOhms 70nC
Technical Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 25 V
FET Feature -
Power Dissipation (Max) 66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TO-252AA (DPAK)
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging IRFR5410TRLPBF
Suggested Replacement
9,005
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IRFR5410TRPBF from Infineon Technologies falls under the mosfets category. Key specifications include a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 13A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 205mOhm @ 7.8A, 10V. This part has a typical lead time of 112 Days from factory. You can source IRFR5410TRPBF through Simplytronix, with fast shipping and verified authenticity.

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