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IRFP4229PBFXKMA1

MOSFETs IR FET >60-400V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 25 V
FET Feature -
Power Dissipation (Max) 310W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 400
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,007
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 77 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IRFP4229PBFXKMA1 from Infineon Technologies falls under the mosfets category. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 250 V, a current, continuous drain (id) @ 25°C of 44A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 46mOhm @ 26A, 10V. This part has a typical lead time of 77 Days from factory and ships with a full manufacturer datasheet available for download. Order IRFP4229PBFXKMA1 from Simplytronix for authenticated stock and same-day order processing.

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