| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 14240 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Standard Pack Qty | 1000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 56 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129010 |
| TARIC | 8542319000 |
| MXHTS | 8542310302 |
| ECCN | EAR99 |
IRFB7430PBF is a mosfets manufactured by Infineon Technologies. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 195A (Tc), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 1.3mOhm @ 100A, 10V. This part has a typical lead time of 56 Days from factory and ships with a full manufacturer datasheet available for download. Order IRFB7430PBF from Simplytronix for authenticated stock and same-day order processing.