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IRFB4229PBFXKMA1

MOSFETs IR FET >60-400V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 46mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 25 V
FET Feature -
Power Dissipation (Max) 330W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
14,324
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Infineon Technologies's IRFB4229PBFXKMA1 is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 250 V, a current, continuous drain (id) @ 25°C of 46A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 46mOhm @ 26A, 10V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. You can source IRFB4229PBFXKMA1 through Simplytronix, with fast shipping and verified authenticity.

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