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MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLL...
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 15 V |
| Current - Continuous Drain (Id) @ 25°C | 58A (Ta), 379A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Rds On (Max) @ Id, Vgs | 0.45mOhm @ 30A, 7V |
| Vgs(th) (Max) @ Id | 2V @ 432µA |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 7 V |
| Vgs (Max) | ±7V |
| Input Capacitance (Ciss) (Max) @ Vds | 6240 pF @ 7.5 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 89W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-WHTFN-9 |
| Package / Case | 9-PowerWDFN |
| Packaging | Reel |
| Standard Pack Qty | 6000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 364 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's IQE004NE1LM7CGSCATMA1 is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 15 V, a current, continuous drain (id) @ 25°C of 58A (Ta), 379A (Tc), a drive voltage of 4.5V, 7V and a rds on (max) @ id, vgs of 0.45mOhm @ 30A, 7V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. You can source IQE004NE1LM7CGSCATMA1 through Simplytronix, with fast shipping and verified authenticity.