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IPZ40N04S5L7R4ATMA1 Infineon Technologies
*For representation only.

IPZ40N04S5L7R4ATMA1

MOSFETs MOSFET_(20V 40V)
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 25 V
FET Feature -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,863
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 18 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

IPZ40N04S5L7R4ATMA1 is a mosfets manufactured by Infineon Technologies. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 40A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 7.4mOhm @ 20A, 10V. This part has a typical lead time of 18 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPZ40N04S5L7R4ATMA1 through Simplytronix, with fast shipping and verified authenticity.

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