*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 700mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.7 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 158 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 22.7W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO251-3 |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1500 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | IPD70R1K4P7AUMA1 |
12,825
Units In Stock
📦 Tube
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- Global shipping
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Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the IPS70R1K4P7SAKMA1 is classified as a mosfets. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 700 V, a current, continuous drain (id) @ 25°C of 4A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 1.4Ohm @ 700mA, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPS70R1K4P7SAKMA1 through Simplytronix, with fast shipping and verified authenticity.
