| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 23A, 12V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.43mA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 12 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 416W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-22-101 |
| Package / Case | 22-PowerBSOP Module |
| Packaging | Reel |
| Standard Pack Qty | 750 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 133 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Manufactured by Infineon Technologies, the IPQC60T022S7AXTMA1 is classified as a mosfets. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 90A (Tc), a drive voltage of 12V and a rds on (max) @ id, vgs of 22mOhm @ 23A, 12V. This part has a typical lead time of 133 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IPQC60T022S7AXTMA1 in stock, backed by a genuine parts guarantee and quick dispatch.