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IPQC60R017S7XTMA1 Infineon Technologies
*For representation only.

IPQC60R017S7XTMA1

MOSFETs HIGH POWER_NEW
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 12V
Rds On (Max) @ Id, Vgs 17mOhm @ 29A, 12V
Vgs(th) (Max) @ Id 4.5V @ 1.89mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 12 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7370 pF @ 300 V
FET Feature -
Power Dissipation (Max) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-22
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 750
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,216
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Infineon Technologies's IPQC60R017S7XTMA1 is a widely used mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 30A (Tc), a drive voltage of 12V and a rds on (max) @ id, vgs of 17mOhm @ 29A, 12V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Order IPQC60R017S7XTMA1 from Simplytronix for authenticated stock and same-day order processing.

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