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IPP60R037CM8XKSA1 Infineon Technologies
*For representation only.

IPP60R037CM8XKSA1

MOSFETs HIGH POWER_NEW
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 70A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 37mOhm @ 27A, 10V
Vgs(th) (Max) @ Id 4.7V @ 680µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3458 pF @ 400 V
FET Feature -
Power Dissipation (Max) 390W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,731
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New at Mouser
Lead Time 17 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IPP60R037CM8XKSA1 from Infineon Technologies falls under the mosfets category. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 70A (Tj), a drive voltage of 10V and a rds on (max) @ id, vgs of 37mOhm @ 27A, 10V. This part has a typical lead time of 17 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IPP60R037CM8XKSA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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