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IPP100N06S2L05AKSA2 Infineon Technologies
*For representation only.

IPP100N06S2L05AKSA2

MOSFETs MOSFET_)40V 60V)
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5660 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,352
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 9 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the IPP100N06S2L05AKSA2 is classified as a mosfets. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 55 V, a current, continuous drain (id) @ 25°C of 100A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 4.7mOhm @ 80A, 10V. This part has a typical lead time of 9 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPP100N06S2L05AKSA2 for same-day shipping with genuine parts guaranteed.

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