*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 500 |
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Alternate / Replacement Parts
| Alternate Packaging | IPP045N10N3 G |
| Suggested Replacement | IPP045N10N3G |
13,207
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 13 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
Infineon Technologies's IPP045N10N3GXKSA1 is a widely used mosfets in electronic designs. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 100A (Tc), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 4.5mOhm @ 100A, 10V. This part has a typical lead time of 13 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IPP045N10N3GXKSA1 in stock, backed by a genuine parts guarantee and quick dispatch.
