*For representation only.
Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 41.7A, 10V |
| Vgs(th) (Max) @ Id | 4.7V @ 1.06mA |
| Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5382 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 543W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-16-6 |
| Package / Case | 16-PowerSOP Module |
Product Attributes
| Packaging | |
| Standard Pack Qty |
14,043
In Stock
Packaging:
✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request
click here to view sample report
Key Specifications
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Reported Lead Time | 14 Days (from factory) |
Documentation
Download Datasheet
Compliance & Export Information
| Country | Code |
|---|---|
| TARIC | 8541290000 |
| ECCN | EAR99 |
Product Overview
IPLT60R024CM8XTMA1 by Infineon Technologies is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.
Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.
