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IPL60R075CFD7AUMA1 Infineon Technologies
*For representation only.

IPL60R075CFD7AUMA1

MOSFETs HIGH POWER_NEW
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 15.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2721 pF @ 400 V
FET Feature -
Power Dissipation (Max) 189W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-VSON-4
Package / Case 4-PowerTSFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,765
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 364 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The IPL60R075CFD7AUMA1 from Infineon Technologies falls under the mosfets category. It features a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 33A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 75mOhm @ 15.1A, 10V. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPL60R075CFD7AUMA1 through Simplytronix, with fast shipping and verified authenticity.

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