*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 19µA |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 25V |
| Power - Max | 51W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
3,064
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
The IPG20N06S2L50AATMA1 from Infineon Technologies falls under the mosfets category. It features a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 55V, a current, continuous drain (id) @ 25°C of 20A and a rds on (max) @ id, vgs of 50mOhm @ 15A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Order IPG20N06S2L50AATMA1 from Simplytronix for authenticated stock and same-day order processing.
