*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 15µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 25V |
| Power - Max | 41W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
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Alternate / Replacement Parts
| Alternate Packaging | IPG20N04S4L-11A |
| Suggested Replacement | IAUCN04S7L053DAT |
9,823
Units In Stock
📦 Reel
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- Global shipping
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Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
IPG20N04S4L11AATMA1 is a mosfets manufactured by Infineon Technologies. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 40V, a current, continuous drain (id) @ 25°C of 20A and a rds on (max) @ id, vgs of 11.6mOhm @ 17A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPG20N04S4L11AATMA1 through Simplytronix, with fast shipping and verified authenticity.
