| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 22µA |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3050pF @ 25V |
| Power - Max | 54W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-4 |
| Packaging | Reel |
| Standard Pack Qty | 5000 |
| Alternate Packaging | IPG20N04S4L-08 |
| Suggested Replacement | IPG20N04S4L-08 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's IPG20N04S4L08ATMA1 is a widely used mosfets in electronic designs. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 40V, a current, continuous drain (id) @ 25°C of 20A and a rds on (max) @ id, vgs of 8.2mOhm @ 17A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Order IPG20N04S4L08ATMA1 from Simplytronix for authenticated stock and same-day order processing.