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IPG20N04S4L08ATMA1 Infineon Technologies
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IPG20N04S4L08ATMA1

Infineon Technologies Not For New Designs
MOSFETs N-Ch 40V 20A TDSON-8 OptiMOS-T2
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3050pF @ 25V
Power - Max 54W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4
📦 Product Attributes
Packaging Reel
Standard Pack Qty 5000
🔁 Alternate / Replacement Parts
Alternate Packaging IPG20N04S4L-08
Suggested Replacement IPG20N04S4L-08
5,333
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle Not Recommended for New Designs
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Infineon Technologies's IPG20N04S4L08ATMA1 is a widely used mosfets in electronic designs. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of Logic Level Gate, a drain to source voltage of 40V, a current, continuous drain (id) @ 25°C of 20A and a rds on (max) @ id, vgs of 8.2mOhm @ 17A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Order IPG20N04S4L08ATMA1 from Simplytronix for authenticated stock and same-day order processing.

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