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IPF026N15NM6ATMA1 Infineon Technologies
*For representation only.

IPF026N15NM6ATMA1

MOSFETs IFX FET >100-150V
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 239A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V, 15V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 100A, 15V
Vgs(th) (Max) @ Id 4V @ 276µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 75 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 395W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,147
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 8 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IPF026N15NM6ATMA1 from Infineon Technologies falls under the mosfets category. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 150 V, a current, continuous drain (id) @ 25°C of 25A (Ta), 239A (Tc), a drive voltage of 8V, 15V and a rds on (max) @ id, vgs of 2.5mOhm @ 100A, 15V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPF026N15NM6ATMA1 for same-day shipping with genuine parts guaranteed.

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