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IPDQ65R125CFD7AXTMA1

MOSFETs AUTOMOTIVE_COOLMOS
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1566 pF @ 400 V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-22-1
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 750
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,697
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 147 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Infineon Technologies, the IPDQ65R125CFD7AXTMA1 is classified as a mosfets. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 24A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 125mOhm @ 7.8A, 10V. This part has a typical lead time of 147 Days from factory and ships with a full manufacturer datasheet available for download. Order IPDQ65R125CFD7AXTMA1 from Simplytronix for authenticated stock and same-day order processing.

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