*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 125A, 10V |
| Vgs(th) (Max) @ Id | 4.7V @ 3.24mA |
| Gate Charge (Qg) (Max) @ Vgs | 375 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 18004 pF @ 400 V |
| Power Dissipation (Max) | 1.249kW (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-22 |
| Package / Case | 22-PowerBSOP Module |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 750 |
4,201
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 24 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
IPDQ65R008CM8XTMA1 is a mosfets manufactured by Infineon Technologies. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 270A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 8mOhm @ 125A, 10V. This part has a typical lead time of 24 Days from factory and ships with a full manufacturer datasheet available for download. Order IPDQ65R008CM8XTMA1 from Simplytronix for authenticated stock and same-day order processing.
