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IPDQ60R070CM8XTMA1 Infineon Technologies
*For representation only.

IPDQ60R070CM8XTMA1

MOSFETs 600V CoolMOS CM8 Power Transistor
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 14.3A, 10V
Vgs(th) (Max) @ Id 4.7V @ 360µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1878 pF @ 400 V
FET Feature -
Power Dissipation (Max) 205W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-HDSOP-22
Package / Case 22-PowerBSOP Module
📦 Product Attributes
Packaging Reel
Standard Pack Qty 750
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,164
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 23 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

The IPDQ60R070CM8XTMA1 from Infineon Technologies falls under the mosfets category. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 37A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 70mOhm @ 14.3A, 10V. This part has a typical lead time of 23 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IPDQ60R070CM8XTMA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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