*For representation only.
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Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 470µA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1747 pF @ 400 V |
| Power Dissipation (Max) | 227W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-10-1 |
| Package / Case | 10-PowerSOP Module |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1700 |
5,263
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 20 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the IPDD60R090CFD7XTMA1 is classified as a mosfets. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 600 V, a current, continuous drain (id) @ 25°C of 33A (Tc), a rds on (max) @ id, vgs of 90mOhm @ 9.3A, 10V and a vgs(th) (max) @ id of 4.5V @ 470µA. This part has a typical lead time of 20 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPDD60R090CFD7XTMA1 through Simplytronix, with fast shipping and verified authenticity.
