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IPD70N03S4L04ATMA1 Infineon Technologies
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IPD70N03S4L04ATMA1

MOSFETs N-Ch 30V 70A DPAK-2 OptiMOS-T2
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id 2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging IPD70N03S4L-04
Suggested Replacement
3,799
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 63 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The IPD70N03S4L04ATMA1 from Infineon Technologies falls under the mosfets category. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 30 V, a current, continuous drain (id) @ 25°C of 70A (Tc), a drive voltage of 4.5V, 10V and a rds on (max) @ id, vgs of 4.3mOhm @ 70A, 10V. This part has a typical lead time of 63 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPD70N03S4L04ATMA1 through Simplytronix, with fast shipping and verified authenticity.

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