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IPB60R180C7ATMA1

MOSFETs HIGH POWER_NEW
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1080 pF @ 400 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Product Attributes
Packaging Reel
Standard Pack Qty1000
Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,147
In Stock
Packaging: Reel
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✔ 24h Response
✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryMOSFETs
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 56 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
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