*For representation only.
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Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Ta), 62A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 53A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 5.55mA |
| Gate Charge (Qg) (Max) @ Vgs | 236 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 50 V |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
8,398
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 26 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the IPB330P10NMATMA1 is classified as a mosfets. It features a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 6.9A (Ta), 62A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 33mOhm @ 53A, 10V. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. Order IPB330P10NMATMA1 from Simplytronix for authenticated stock and same-day order processing.
