*For representation only.
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Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 13.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 185mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.04mA |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 83W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3 |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
12,023
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 16 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
The IPB19DP10NMATMA1 from Infineon Technologies falls under the mosfets category. This component is defined by a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 100 V, a current, continuous drain (id) @ 25°C of 2.9A (Ta), 13.8A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 185mOhm @ 12A, 10V. This part has a typical lead time of 16 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries IPB19DP10NMATMA1 in stock, backed by a genuine parts guarantee and quick dispatch.
