*For representation only.
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Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 410µA |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 17640 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7-3 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 1000 |
5,221
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 63 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Infineon Technologies, the IPB180P04P403ATMA2 is classified as a mosfets. Key specifications include a FET type of P-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 180A (Tc), a rds on (max) @ id, vgs of 2.8mOhm @ 100A, 10V and a vgs(th) (max) @ id of 4V @ 410µA. This part has a typical lead time of 63 Days from factory and ships with a full manufacturer datasheet available for download. Order IPB180P04P403ATMA2 from Simplytronix for authenticated stock and same-day order processing.
