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IPB180N04S400ATMA1 Infineon Technologies
*For representation only.

IPB180N04S400ATMA1

MOSFETs N-Ch 40V 180A D2PAK-6 OptiMOS-T2
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 0.98mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 286 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 22880 pF @ 25 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7-3
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IPB180N04S4-00
Suggested Replacement
7,392
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 63 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

The IPB180N04S400ATMA1 from Infineon Technologies falls under the mosfets category. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 40 V, a current, continuous drain (id) @ 25°C of 180A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 0.98mOhm @ 100A, 10V. This part has a typical lead time of 63 Days from factory and ships with a full manufacturer datasheet available for download. Order IPB180N04S400ATMA1 from Simplytronix for authenticated stock and same-day order processing.

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