Search Products

Menu
IPB036N12N3GATMA1 Infineon Technologies
*For representation only.

IPB036N12N3GATMA1

MOSFETs N-Ch 120V 180A D2PAK-6 OptiMOS 3
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs 211 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 60 V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IPB036N12N3 G
Suggested Replacement
13,644
Units In Stock
📦 Reel
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 8 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
Product Overview

Infineon Technologies's IPB036N12N3GATMA1 is a widely used mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 120 V, a current, continuous drain (id) @ 25°C of 180A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 3.6mOhm @ 100A, 10V. This part has a typical lead time of 8 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IPB036N12N3GATMA1 for same-day shipping with genuine parts guaranteed.

Similar Products
IQE036N08NM6SCATMA1
IQE036N08NM6SCATMA1 Infineon Technologies
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V
IPT009N08NM6ATMA1
IPT009N08NM6ATMA1 Infineon Technologies
MOSFETs OptiMOS 6 n-channel power MOSFET 80 V in TOLL
IMW40R025M2HXKSA1
IMW40R025M2HXKSA1 Infineon Technologies
MOSFETs SILICON CARBIDE MOSFET
IAUTN15S6N025ATMA1
IAUTN15S6N025ATMA1 Infineon Technologies
MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLL...