| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 180A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 143µA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7800 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 214W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Alternate Packaging | IPB014N06N |
| Suggested Replacement |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 63 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Infineon Technologies's IPB014N06NATMA1 is a widely used mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 60 V, a current, continuous drain (id) @ 25°C of 34A (Ta), 180A (Tc), a drive voltage of 6V, 10V and a rds on (max) @ id, vgs of 1.4mOhm @ 100A, 10V. This part has a typical lead time of 63 Days from factory and ships with a full manufacturer datasheet available for download. You can source IPB014N06NATMA1 through Simplytronix, with fast shipping and verified authenticity.