| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 16.4 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 517 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 26.4W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220 Full Pack |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Tube |
| Standard Pack Qty | 500 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 24 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
Infineon Technologies's IPA70R360P7SXKSA1 is a widely used mosfets in electronic designs. This component is defined by a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 700 V, a current, continuous drain (id) @ 25°C of 12.5A (Tc), a drive voltage of 10V and a rds on (max) @ id, vgs of 360mOhm @ 3A, 10V. This part has a typical lead time of 24 Days from factory and ships with a full manufacturer datasheet available for download. Order IPA70R360P7SXKSA1 from Simplytronix for authenticated stock and same-day order processing.