*For representation only.
⚙
Technical Specifications
| FET Type | - |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-2 |
| Package / Case | 8-PowerSFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
9,658
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | Not Recommended for New Designs |
| Lead Time | 364 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Infineon Technologies's IMT65R163M1HXUMA1 is a widely used mosfets in electronic designs. Notable characteristics of this part include a FET type of -, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of -, a drive voltage of 18V and a rds on (max) @ id, vgs of -. This part has a typical lead time of 364 Days from factory and ships with a full manufacturer datasheet available for download. Order IMT65R163M1HXUMA1 from Simplytronix for authenticated stock and same-day order processing.
