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IAUTN15S6N038GATMA1 Infineon Technologies
*For representation only.

IAUTN15S6N038GATMA1

MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLG (10x12)
Technical Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 170A (Tj)
Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 85A, 10V
Vgs(th) (Max) @ Id 4V @ 166µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 75 V
FET Feature -
Power Dissipation (Max) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PG-HSOG-8-1
Package / Case 8-PowerSMD, Gull Wing
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,539
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 18 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Infineon Technologies's IAUTN15S6N038GATMA1 is a widely used mosfets in electronic designs. Notable characteristics of this part include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 150 V, a current, continuous drain (id) @ 25°C of 170A (Tj), a drive voltage of 8V, 10V and a rds on (max) @ id, vgs of 3.8mOhm @ 85A, 10V. This part has a typical lead time of 18 Days from factory and ships with a full manufacturer datasheet available for download. Order IAUTN15S6N038GATMA1 from Simplytronix for authenticated stock and same-day order processing.

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