*For representation only.
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Technical Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel, Common Drain, Common Source |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tj) |
| Rds On (Max) @ Id, Vgs | 1.15mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.3V @ 275µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 15340pF @ 40V |
| Power - Max | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerSFN |
| Supplier Device Package | PG-HSOF-8-2 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
7,264
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 18 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The IAUTN08S5N012LATMA1 from Infineon Technologies falls under the mosfets category. Key specifications include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel, Common Drain, Common Source, a drain to source voltage of 80V, a current, continuous drain (id) @ 25°C of 300A (Tj), a rds on (max) @ id, vgs of 1.15mOhm @ 100A, 10V and a vgs(th) (max) @ id of 3.3V @ 275µA. This part has a typical lead time of 18 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IAUTN08S5N012LATMA1 for same-day shipping with genuine parts guaranteed.
