| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 165A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 2.44mOhm @ 83A, 10V |
| Vgs(th) (Max) @ Id | 3.2V @ 74.7µA |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4849 pF @ 40 V |
| FET Feature | - |
| Power Dissipation (Max) | 157W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-LHDSO-10-1 |
| Package / Case | 10-LSOP (0.216", 5.48mm Width) Exposed Pad |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 26 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Infineon Technologies's IAUCN08S7N024TATMA1 is a widely used mosfets in electronic designs. Key specifications include a FET type of N-Channel, a technology of MOSFET (Metal Oxide), a drain to source voltage of 80 V, a current, continuous drain (id) @ 25°C of 165A (Tj), a drive voltage of 7V, 10V and a rds on (max) @ id, vgs of 2.44mOhm @ 83A, 10V. This part has a typical lead time of 26 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks IAUCN08S7N024TATMA1 for same-day shipping with genuine parts guaranteed.